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Find similar grantsRF Semiconductor Devices, RF Solid State Amplifiers and Wide Bandgap Materials is sponsored by Office of Naval Research (ONR). This program aims to develop solid-state (e. g.
, wide bandgap semiconductor), low noise, high-speed electronic devices and circuits for use in surveillance, electronic warfare, multifunctional RF systems, and communications.
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Electronic Devices, RF Semiconductors and Amplifiers The objective of the RF Semiconductor Devices, RF Solid State Amplifiers and Wide Bandgap Materials program is to develop solid state (e.g., wide bandgap semiconductor), low noise, high speed electronic devices and circuits for use in surveillance, electronic warfare, multifunctional RF systems and communications.
Included is basic and applied research in device physics, emerging solid state phenomena, materials, and circuit architectures. Research Concentration Areas Emphasis is on device advancements that enable a significant improvement in broadband performance, high linearity, and/or high (e.g., 60%) power added efficiency.
Also included are emerging applications for wide bandgap materials and devices in the areas of transmitter and receiver components, mixed signal and digital circuits. Current research interests span from HF through mm-wave and up to the TeraHertz (THz) frequencies.
The program is investigating electronic properties of wide bandgap, III-V and silicon-based semiconductors and novel devices, focusing on novel high power microwave and switching devices for broadband radar, electronic warfare, communications, and multifunctional systems applications.
Research Challenges and Opportunities Advancing wide bandgap materials properties such as GaN and related group III-Nitrides, along with emerging solid state technologies in order to advance new transistor technologies for solid state power amplification. High efficiency amplification (DC to RF conversion efficiency) is required as power consumption and thermal dissipation directly impact overall platform affordability.
Very broadband and highly linear amplifiers enable shared RF aperture approaches to reduce the proliferation of single function antennas that currently clutter Navy platforms. For detailed application and submission information for this research topic, please refer to our broad agency announcement (BAA) No. N0001425SB001 .
Contracts: All white papers and full proposals for contracts must be submitted through the ONR Submission Portal ; instructions are included in the BAA. Grants: All white papers for grants must be submitted through the ONR Submission Portal , and full proposals for grants must be submitted through grants. gov ; instructions are included in the BAA.
kevin. r. leonard1.
civ@us. navy. mil
According to the current listing, eligibility includes: White papers and full proposals for contracts or grants are submitted through the ONR Submission Portal and grants. gov respectively, as per instructions in BAA N0001425SB001. Confirm the full requirements in the official notice before applying.
RF Semiconductor Devices, RF Solid State Amplifiers and Wide Bandgap Materials is funded by Office of Naval Research (ONR). Verify program details on the funder's official page before applying.
Start from the official opportunity page linked in this listing — it carries the sponsor's submission instructions.
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DoD Multidisciplinary Research Program of the University Research Initiative (MURI) is sponsored by Department of Defense (DoD) - Office of Naval Research (ONR). The Multidisciplinary Research Program of the University Research Initiative (MURI), administered by the Department of Defense Office of Naval Research, supports basic research in science and engineering at U. S.
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