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High Temp Semiconductor Transistors for Hot DoW Environments and Electronic Warfare (DAF26BZ05-DV030) is sponsored by Department of the Air Force (USAF). This topic solicits high temperature semiconductor electronics device and circuit solutions which can operate at temperatures at or above 500°C to address hot environment and electronic warfare needs.
Proposed efforts should have already identified a clear application with a credible path to transition into the microelectronics defense industrial base.
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Or search similar grants →According to the current listing, eligibility includes: U.S. small businesses. Confirm the full requirements in the official notice before applying.
The current listing shows not specified, but DARPA Phase I awards generally range from $175,000 to $250,000, and Phase II awards commonly between $1,000,000 and $1,500,000. Verify award ceilings, matching requirements, and allowable costs in the official notice.
The published deadline was September 23, 2026, which has passed. Check the official notice for any future application windows before investing time in a proposal.
High Temp Semiconductor Transistors for Hot DoW Environments and Electronic Warfare (DAF26BZ05-DV030) is funded by Department of the Air Force (USAF). Verify program details on the funder's official page before applying.
Start from the official opportunity page linked in this listing — it carries the sponsor's submission instructions.
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